Image sensor and image sensor pixel having JFET source follower

ABSTRACT

Some embodiments provide an image sensor pixel comprising a junction field effect transistor (JFET) and a floating diffusion configured to act as the gate of the JFET. An image sensor may comprise a plurality of pixels, at least one pixel comprising floating diffusion region formed in a semiconductor substrate, a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion, and a JFET having (i) a source and a drain coupled by a channel region, and (ii) a gate comprising the floating diffusion region.

RELATED APPLICATIONS

This application is a continuation of application Ser. No. 15/563,593,which is a national stage application under 35 U.S.C. § 371 ofInternational Application No. PCT/US2016/025444, filed Mar. 31, 2016,which claims the benefit of U.S. Provisional Application No. 62/141,222,filed Mar. 31, 2015, each of which is hereby incorporated herein byreference in its entirety.

BACKGROUND

The Quanta Image Sensor (QIS) has been proposed as a possiblenext-generation image sensor. In the single-bit QIS, the specialized,sub-diffraction-limit sized binary-output photo-element sensitive to asingle photoelectron is called a “jot”. Central to single-bit as well asmulti-bit QIS implementations is single-electron sensitivity (˜0.15e−r.m.s.) which can be obtained from high, in-pixel conversion gain, e.g.,more than 10000 μVe−. For the high conversion gain needed, thecapacitance of the floating diffusion (FD) node needs to be minimized.According to the present inventors' previous QIS work, the capacitanceof the FD node has been greatly reduced, but further reductions in FDnode capacitance and/or additional or alternative ways to reduce FD nodecapacitance may still be advantageous and/or desired.

By way of example, in accordance with the present inventors' previousQIS work, some QIS pixel designs incorporating a pump-gate chargetransfer with a distal FD and a gateless reset have a greatly reduced FDtotal capacitance such that the residual part of the FD capacitance ismainly attributed to the MOSFET source-follower (SF). According to acalculation for an example of such a QIS design, to achieve a conversiongain of 10000 μV/e−, the total FD capacitance needs to be lower than0.16 fF. With a 65 nm CMOS process, a MOSFET SF will contribute about0.3 fF to the FD capacitance, thus effectively rendering it moredifficult to achieve the 10000 μV/e− conversion gain for such a designat this technology node.

SUMMARY OF SOME EMBODIMENTS

Some embodiments provide an image sensor pixel comprising a junctionfield effect transistor (JFET) and a floating diffusion regionconfigured to act as the gate of the JFET. In some embodiments, an imagesensor may comprise a plurality of pixels, at least one pixel comprisinga floating diffusion region formed in a semiconductor substrate, atransfer gate configured to selectively cause transfer of photochargestored in the pixel to the floating diffusion region, and a JFET having(i) a source and a drain coupled by a channel region, and (ii) a gatecomprising the floating diffusion region.

In some embodiments, the channel region comprises a first doped regionof a first conductivity type configured to conduct current between thesource and drain along a lateral direction substantially parallel to asurface of the substrate, the floating diffusion region comprises asecond doped region of a second conductivity type opposite to the firstconductivity type, and the second doped region of the floating diffusionregion is disposed adjacent to and beneath the first doped region alongthe lateral direction between the source and drain.

In some embodiments, the floating diffusion region and the channelregion may be configured such that charge selectively transferred to thefloating diffusion region by operation of the transfer gate modulatescurrent flow between the source and drain via the channel region.

And in some embodiments, the floating diffusion region and the channelregion may be configured such that charge selectively transferred to thefloating diffusion region by operation of the transfer gate causes achange in the gate potential that is followed by the potential of thesource of the JFET.

In some embodiments, the capacitance of floating diffusion region issmall enough to provide a conversion gain of at least 500 μV/e− and theimage sensor is configured as a QIS.

In some embodiments, the channel may be configured as a buried channel.

While pixels according to some embodiments of the present invention arewell-suited for use in image sensors demanding very high conversion gain(e.g., QIS, qDIS, or other single-bit or multi-bit photoelectroncounting sensors), it will be understood in view of the ensuingdisclosure that some embodiments of the present invention are alsoapplicable to conventional CMOS image sensors (e.g., present-day,commercially available CMOS image sensors for consumer, manufacturing,and/or scientific applications).

Throughout the description and claims, the following terms take at leastthe meanings explicitly associated herein, unless the context dictatesotherwise. The meanings identified below do not necessarily limit theterms, but merely provide illustrative examples for the terms. Thephrase “an embodiment” as used herein does not necessarily refer to thesame embodiment, though it may. In addition, the meaning of “a,” “an,”and “the” include plural references; thus, for example, “an embodiment”is not limited to a single embodiment but refers to one or moreembodiments. Similarly, the phrase “one embodiment” does not necessarilyrefer the same embodiment and is not limited to a single embodiment. Asused herein, the term “or” is an inclusive “or” operator, and isequivalent to the term “and/or,” unless the context clearly dictatesotherwise. The term “based on” is not exclusive and allows for beingbased on additional factors not described, unless the context clearlydictates otherwise.

Also, as used herein, “n and “p” designations (e.g., as in “n-type,”“p-type,” “n-well,” etc.) are used in ordinary and customary manner todesignate donor and acceptor type impurities that promote electron andhole carriers, respectively, as majority carriers. The term “substrate”is to be understood as a semiconductor-based material such as silicon,silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology,doped and undoped semiconductors, epitaxial layers of silicon supportedby a base semiconductor foundation, and other semiconductor structures.Furthermore, when reference is made to a “substrates” in the followingdescription, previous process steps may have been utilized to formregions or junctions in the base semiconductor structure or foundation.In addition, the semiconductor need not be silicon-based, but may bebased on, for example, silicon-germanium, germanium, or galliumarsenide.

In addition, as used herein, unless the context clearly dictatesotherwise, the term “coupled” refers to directly connected or toindirectly connected through one or more intermediate components and, insome contexts, may also denote or include electrically coupled, such asconductively coupled, capacitively coupled, and/or inductively coupled.Further, “conductively coupled” refers to being coupled via one or moreintermediate components that permit energy transfer via conductioncurrent, which is capable of including direct current as well asalternating current, while “capacitively coupled” refers to beingelectrostatically coupled through one or more dielectric media, andpossibly also via one or more intervening conductors (e.g., via a seriesof capacitive components), that permit energy transfer via displacementcurrent and not via direct current. Those skilled in the art willfurther understand that elements may be capacitively coupledintentionally or unintentionally (e.g., parasitically) and that in somecontexts, elements said to be capacitively coupled may refer tointentional capacitive coupling. In addition, those skilled in the artwill also understand that in some contexts the term “coupled” may referto operative coupling, through direct and/or indirect connection. Forinstance, a conductor (e.g., control line) said to be coupled to thegate of a transistor may refer to the conductor being operable tocontrol the gate potential so as to control the operation of thetransistor (e.g., switching the transistor between “on” and “off”states), regardless of whether the conductor is connected to the gateindirectly (e.g., via another transistor, etc.) and/or directly.

It will be understood that simply for ease of reference and clarity ofexposition with respect to describing cross-sectional views of pixelsshown in the drawings, terms such as “upper,” “top,” “lower,” “bottom,”“overlying,” “underlying,” “above” and “below,” and the like, withreference to a layer, junction, doped region, or other structure refersto a relative spatial position with respect to the perspective of thedepicted view and does not denote a preferred or required orientation.In this regard, it will also be understood that such terms may not havea relation to terms such as “frontside” or “backside” with respect tothe surface of the image sensor's wafer/substrate that is configured tobe illuminated. For instance, depending on the viewing perspective, afirst doped region may be said to overlie or be on top of a second dopedregion, even though the first doped region might be disposed closer tothe “backside” surface of the wafer/substrate (and the image sensor maybe configured for backside illumination). It is understood, therefore,as noted, that terminology such as “top,” “upper,” “bottom,” “lower,”and the like, as used herein is a convention simply for convenience andease of reference with respect to referring to different layers, anddoes not otherwise impart any limitation on the overall design and/ororientation of an image sensor or pixel in accordance with the presentdisclosure.

In this regard, for ease of reference, as used herein, two layers,regions, or other structures/elements may be referred to as being“adjacent” if they do not include one or more intervening layers,regions (e.g., doped regions), or other structures/elements. In otherwords, two layers, regions, or other structures/elements referred tospatially (e.g., “on,” “above,” “overlying,” “below,” “underlying,”etc.) with respect to each other may have one or more interveninglayers, regions, or other structures/elements; however, use of the term“adjacent” (or, similarly, “directly,” such as “directly on,” “directlyoverlying,” and the like) denotes that no intervening layers, regions,or other structures/elements are present.

It will be appreciated by those skilled in the art that the foregoingbrief description and the following description with respect to thedrawings are illustrative and explanatory of some embodiments of thepresent invention, and are neither representative nor inclusive of allsubject matter and embodiments within the scope of the presentinvention, nor intended to be restrictive or characterizing of thepresent invention or limiting of the advantages which can be achieved byembodiments of the present invention, nor intended to require that thepresent invention necessarily provide one or more of the advantagesdescribed herein with respect to some embodiments. Thus, theaccompanying drawings, referred to herein and constituting a parthereof, illustrate some embodiments of the invention, and, together withthe detailed description, serve to explain principles of someembodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects, features, and advantages of some embodiments of the invention,both as to structure and operation, will be understood and will becomemore readily apparent in view of the following description ofnon-limiting and non-exclusive embodiments in conjunction with theaccompanying drawings, in which like reference numerals designate thesame or similar parts throughout the various figures, and wherein:

FIG. 1A schematically depict a plan view of an illustrative pixel of animage sensor, in accordance with some embodiments of the presentdisclosure;

FIGS. 1B and 1C schematically depict respective orthogonalcross-sectional views of an illustrative pixel according to theembodiment of FIG. 1A according to some embodiments of the presentdisclosure;

FIGS. 2A and 2B schematically depict respective orthogonalcross-sectional views of an illustrative pixel according to analternative embodiment of a pixel according to some embodiments of thepresent disclosure;

FIGS. 3-8, 9A, 9B, and 9C show results obtained by performing TCADsimulations of pixel structures according to some illustrativeembodiments of the present disclosure;

FIGS. 10 and 11 show respective illustrative layout designs according tosome embodiments of the present disclosure using on a commercial 65 nmCMOS CIS process; and

FIG. 12 depicts a block diagram of an illustrative image sensorarchitecture that may be used to implement some embodiments inaccordance with the present disclosure.

DETAILED DESCRIPTION OF SOME EMBODIMENTS

Illustrative embodiments of an image sensor pixel having a JFETsource-follower are disclosed. As those skilled in the art willunderstand in view of the present disclosure, embodiments according tothe present disclosure are particularly well-suited for implementing aQIS (e.g., a single bit or multi-bit QIS having, for example, a fullwell capacity (FWC) of 2^(n)−1 photocarriers, where n is an integertypically not greater than 6 or 7) as well as other jot-based imagesensors.

Briefly, in some embodiments, the pixel comprises a floating diffusion(FD) configured as the gate of the JFET source-follower. In suchembodiments, the FD comprises a first semiconductor region of a firstconductivity type (e.g., n-type) that is configured to control, based onthe quantity of photocharge transferred to the FD from a photodiode ofthe pixel, the conductance of a second semiconductor region that has asecond conductivity type opposite to the first conductivity type (e.g.,p-type) and is configured as a channel region of a JFET.

Such embodiments are well suited, for example, for reducing the FDcapacitance by reducing the SF capacitance (e.g., compared to apixel/jot that includes a MOSFET SF), and may be advantageouslyimplemented together with a pump-gate-type charge transfer gate with adistal FD and/or a gateless reset to provide a pixel having very low FDcapacitance and, concomitantly, very high conversion gain, suitable forQIS implementations.

Additionally, a JFET SF in accordance with some embodiments generallyhas better noise performance than a MOSFET SF, thus reducing the minimumhigh conversion gain needed or desired for a given implementation (e.g.,of a QIS pixel). Also, because the gate-to-source capacitance in a JFETSF is a junction capacitance, which is typically much smaller than theoxide capacitance in MOSFET, the total FD capacitance for a pixel usinga JFET SF will be greatly reduced compared to one using a MOSFET SF. Ina TCAD simulation, with a design in accordance with the illustrativeembodiments described below, a 2 mV/e− conversion gain was detectedwithout metal wires included, and a 1.7 mV/e− conversion was detectedwith metal wires included.

Additional aspect, features, and advantages of some embodiments of thepresent invention will be further understood in view of the followingdescription of various illustrative embodiments.

FIG. 1A schematically depicts a plan view of a portion of anillustrative pixel 100 of an image sensor in accordance with someembodiments according to the present disclosure. FIGS. 1B and 1C depictillustrative cross-sectional doping schematics of the pixel of FIG. 1Aalong respective orthogonal directions as indicated by thecross-sectional reference lines XX′ and YY′, while also schematicallyshowing a readout MOSFET Mrs (e.g., in-pixel row-select transistor) forthe pixel and a column bus 32. (As will be understood, in response to areadout signal RS, Mrs selectively couples the JFET source to column bus32 that is biased by current source Is and coupled to additionalout-of-pixel readout circuitry.) For clarity of exposition, as will beunderstood by those skilled in the art, FIGS. 1A, 1B, and 1C (and,likewise, FIGS. 2A and 2B) depict features in an illustrative,idealized/simplified manner, and do not depict all features or elementsthat are or may be included in the pixel; for instance, metallization,interlayer dielectrics, vias/contacts, and the like, are not shown. Itwill also be understood in view of the present disclosure that whilethis illustrative embodiment is configured for backside illumination(BSI), embodiments in accordance with the present disclosure are notlimited to BSI configurations; frontside-illuminated embodiments may beimplemented with a FD that also acts as the gate of JFET SF.

As depicted in FIGS. 1A-1C, an illustrative embodiment of a jot pixelformed in a p-type substrate 17 and configured with a floating diffusionregion that acts as the gate of a JFET SF includes (i) a pump-gate typetransfer gate (TG) that substantially or entirely overlies a photodioderegion comprising n-type storage well (SW) region thataccumulates/stores photocarriers (photoelectrons) generated in the pixelregion during an integration period, (ii) a floating diffusion region FDdistal laterally to (e.g., spaced away from and non-overlapping with)the TG and comprising n-type doped region 16 disposed in a more lightlydoped n-type region (e.g., n−) 18, (iii) a reset drain (RD) comprisingan n+ doped region 11 displaced laterally from and configured forgate-less reset of the FD, and (iv) p+ doped regions 12 and 14contacting a p-type region 20 that is disposed therebetween and overliesn-type region 16 of the FD and is laterally bound by n− doped region 18of the FD.

Also schematically shown is (i) a dielectric layer 19 that forms part of(e.g., the gate dielectric) the TG gate stack and extends over the pixel(e.g., providing surface passivation), and (ii) a more lightly doped(n−) n-type region 27 disposed beneath the storage well (SW) region(e.g., the lighter doping relative to the n-type doping of SW region 25providing for generated photocarriers to drift towards the storage well(SW) region 25. As also shown, drain and source contacts 24 and 26 maybe formed through dielectric 19, andelectrical isolation may be providedby shallow trench isolation (STI).

As will be understood by those skilled in the art in view of the presentdisclosure, p+ regions 12 and 14, p-type region 20, and the FD thus areconfigured, respectively, as drain, source, channel, and gate regions ofa JFET SF. And, as configured, the JFET channel region overlies theFD/gate region that is operative to modulate/control the JFET channel,thus providing for a compact, small-footprint design well-suited for QISimplementations. This configuration according to some embodiments suchas the embodiment of FIGS. 1A-1C provides for the JFET channelconduction direction between source and drain to be generally orthogonalto the direction of charge transfer from the photodiode charge storagewell to the FD.

In accordance with the illustrative embodiment of FIGS. 1A-1C, thepump-gate structure and operation may be implemented in accordance withlow-full-well-capacity vertical pump-gate pixels as disclosed in (i)U.S. Provisional Application No. 61/973,825, filed Apr. 1, 2014,entitled CMOS Image Sensor with Pump Gate and Extremely High ConversionGain, and (ii) “A Pump-gate Jot Device with High Conversion Gain for aQuanta Image Sensor,” IEEE Journal of the Electron Devices Society,3(2), February 2015, each of which is hereby incorporated by referenceherein in its entirety. For example, although not explicitly shown inFIG. 1C, such a vertical pump-gate pixel may include a p+ doped pinningregion laterally bounding the buried n-type charge storage region, asdisclosed in, for example, in the above-referenced US ProvisionalApplication and IEEE journal article. It will be understood, however,that various embodiments according to the present disclosure are notrestricted to using a pump-transfer gate nor a photodiode disposedsubstantially beneath the transfer gate, and may be implemented usingany photodiode and transfer gate configuration suitable for satisfyingthe design requirements of a given implementation (e.g., includingconfigurations having a pinned-photodiode laterally disposed relative tothe transfer gate).

The gate-less reset may be implemented in accordance with embodimentsdescribed in U.S. Provisional Application No. 62/128,893, filed Mar. 5,2015, entitled Gateless Reset for Image Sensor Pixels, which is herebyincorporated by reference herein in its entirety. As will be understoodby those skilled in the art, the illustrative gateless reset embodimentshown in FIGS. 1A-1C does not include a reset transistor gate formedbetween the FD and reset drain (RD) regions (e.g., as shown, there is nogate electrode stack disposed on the surface above and between the FDand the RD). In operation, the FD potential is reset by selectivelyapplying a voltage pulse to the RD via a conductive line 18 (e.g.,interconnect metallization) to control charge transfer from the FDregion to the RD region, without employing a transistor-gate-controlledconductive channel (e.g., comprising inversion layer charge) between theFD and RD. In some embodiments, the RD may also includes a less heavilydoped (e.g., compared to the n+ doping of region 11) n-type regiondisposed adjacent to region 11 laterally in the direction of the FD. Itwill be understood, however, that various embodiments according to thepresent disclosure are not restricted to using gateless reset of the FD;e.g., a reset gate transistor, possibly implemented as a pump-gate(e.g., not overlapping the FD region), may be employed in variousembodiments.

In accordance with the foregoing description of the illustrativeembodiment of FIGS. 1A-1C, within the JFET source follower, the sourceand the drain are formed on p+ doping wells 12 and 14, and they areconnected by a p-type channel 20, which is surrounded by an n− dopedwell. More specifically, underneath the p-type channel 20, as depictedin FIG. 1B, there is an n-type doped region 16, which acts as thefloating diffusion (FD) charge storage node and the JFET gate.

Briefly, in operation of this illustrative embodiment, photon-generatedelectrons are collected/accumulated in the SW potential well of region25, and are selectively transferred to the FD in a charge transferoperation by selective operation of transfer gate TG. The transferredelectrons in FD accumulate in the n-type region 16, thus changing thepotential in region 16 and n-well 18. The potential of region 16modulates the depletion region in, and thus the resistivity of, theoverlying p-type channel; thus, the resistivity of the p-type channel ismodulated according to the charge transferred to region 16 of the FD.And since the source of the JFET source follower is selectivelyconnected to a current source (e.g., Is) during readout, the voltage ofthe JFET source will change and follow the potential of the n-well.Accordingly, by measuring the voltage change of the source node (usingoff-pixel readout circuitry (not shown) coupled to column 32), thephoton-generated electrons can be detected. As will be understood bythose skilled in the art, operation of the illustrative pixel of FIGS.1A-1C may employ correlated-double-sampling by providing appropriatereadout control signal timing and off-pixel-array readout circuitry.

As will be understood by those skilled in the art in view of the presentdisclosure, and in accordance with the embodiment of FIGS. 1A-1C, toimprove the performance of the JFET source follower, the JFET sourceregion should be surrounded by an n− doping well, so that thesource-to-drain current will be confined to flowing through the p-typechannel 20. Any current leakage path between the source and the drainwill reduce the gain of the source follower. The n-type doping well 16,which acts as the FD charge storage region and JFET gate, should be moreheavily doped than the n− doping well 18 nearby, so that the transferredelectrons will only accumulate in the n region 16. Any electronsaccumulated in other locations of the n-well will not be effective tomodulate the p-channel (20) resistivity. For back side illuminated (BSI)image sensors, the JFET drain may also act as the substrate contact. Soto ensure a good connection to the bulk, a deep p-well 22 may be formedunderneath the drain region 12. In some embodiments, substrate 17 mayinclude a p+ region formed in the backside surface to provide for abackside contact (not shown in the illustrative BSI embodiment of FIGS.1A-1C).

Compared to a MOSFET source follower with Si—SiO₂ interface traps, aJFET source follower will have better noise performance, but because thep-channel has extremely high sensitivity to potential change, thesurface interface traps might still cause unnecessary read-out noise.Accordingly, some embodiments may be implemented with a buried channelsource follower to further improve the noise performance. For example,FIGS. 2A and 2B depict schematic orthogonal cross-sectional views of anillustrative embodiment similar to the illustrative embodiment of FIGS.1A-1C, but with a buried p-type channel 30 formed and surrounded by then− doping well 18. As can be seen, the FD n-type region 16 that acts asthe FD charge storage region and the JFET gate is disposed below thechannel 30.

As a non-limiting example simply to further illustrate aspects of someembodiments, a jot device with a pump-gate TG, a gate-less reset, and aJFET source follower, similar to the illustrative embodiment of FIG.1A-1C, was simulated in Synopsys TCAD. In this example, the photodiodeSW had a full well capacity of 350e−, and the JFET was biased by acurrent source of 2 μA. Results of this illustrative simulation arefurther described with reference to FIGS. 3-8 .

In FIG. 3 , the reset phase potential profile of the device is shown. Inthis example, the bias voltage of the reset drain changes between 5V to2.3V. When the bias voltage is high, based on the fringing effect, theelectrons in the FD will be transferred to the RD, and the potential ofthe FD would be increased to 2.8V. After reset, the bias voltage of theRD would be kept to 2.3V to maintain a potential barrier between the FDand RD and prevent charge leakage.

In FIG. 4 , the charge transfer phase (SW to FD) potential profile isshown. In this example, during the charge transfer, the TG is biased by2.5V, and as described in further detail in U.S. Provisional ApplicationNo. 61/973,825, there will be a monotonic potential increase from SW top-type well region PW, and the charge will be transferred to the PWregion temporarily. When the bias voltage of TG returns low, −0.5V, andthe potential of PW becomes lower than the potential of the virtualbarrier (VB) region, the electrons will flow over the virtual potentialbarrier and to the FD, and the double step charge transfer will becompleted.

The transferred electrons accumulate in the FD, and they will modulatethe gate potential of the JFET source follower. The TCAD simulationsalso demonstrated the potential profile of the JFET source follower,showing that the potential of the FD changes after the charge transfer,which changes the depletion region width in the p-channel.

In the transient simulation results, which are depicted in FIG. 5 , itcan be observed that, during charge integration, 280 electrons areaccumulated in SW. After charge transfer, SW is fully depleted, and 280electrons are transferred to FD. In FIG. 6 , it can be observed thatafter charge transfer, the change of the FD potential is 850 mV, whichleads to an output voltage change of 560 mV. The gain of the sourcefollower is 0.65, and the charge-to-voltage conversion gain is 2 mV/e−.

The linearity of the JFET source follower was also tested. As depictedin FIG. 7 , the electron number in the FD reaches 335e− after reset, andit saturates at 760e−. The FD and the output of the source follower havea linear response proportional to the accumulated electrons when thenumber of the electrons is below approximately 688e−.

In the simulation example, a 2 μA column bias current was used, and inthis design, the bias current can be modified from 100 nA to 5 μA. It ispossible to further increase the bias current by changing the dose ofthe FD and the p-channel. The current-drive ability of the JFET SF isdetermined by the resistivity of the channel, and the current magnitudeshould be suitable to keep the source voltage lower than the potentialof the FD to avoid gate-to-source leakage current. Another variation ofthe JFET SF which provides a current-drive ability of 50 μA isdemonstrated in the simulation, as depicted in FIG. 8 .

The results of yet a further TCAD simulation that was conducted for apixel in accordance with the illustrative embodiments of the presentdisclosure are illustrated in FIGS. 9A, 9B, and 9C. Particularly, FIG.9A shows the applied TG and RD signals, FIG. 9B shows the correspondingcharge stored in the SW (which is transferred to the FD), and FIG. 9Cshows the corresponding FD voltage and source-follower source voltage(SF SRC) along with measured FD and SF SRC voltage values before andafter charge transfer.

In accordance with some embodiments, the JFET can also be read out usingcurrent modulation instead of voltage modulation mode. In this case, thechange in FD (JFET gate) potential causes a change in output currentthat is detected by readout circuits well understood by those skilled inthe art. See, e.g., IEEE Transactions On Electron Devices, vol. 44, No.10, October 1997, pp. 1747-1758, “On-Focal-Plane Signal Processing forCurrent-Mode Active Pixel Sensors,” which is hereby incorporated hereinby reference in its entirety.

Two illustrative possible layout designs according to some embodimentsbased on a commercial 65 nm CMOS CIS process are illustrated in FIGS. 10and 11 . The fabrication of this device will not increase the mask countof the baseline process. The first layout has a pitch of 1.3 μm, asshown in FIG. 10 . In this layout, two neighboring jots in one row shareone reset drain, which helps to shrink the size. The second layoutdesign has a pitch of 1 μm, as depicted in FIG. 11 . This layout isconfigured as a 2-way shared readout, and in this case, four jots in onerow share one reset drain. It will be understood, however, that myriadlayout variations are possible for any given technology node andprocess.

FIG. 12 depicts a block diagram of an illustrative CMOS image sensor 40architecture that may be used to implement embodiments in accordancewith the present disclosure, such as embodiments comprising pixels thatemploy an FD that acts as the gate of a JFET SF, in accordance withthose described hereinabove in connection with FIGS. 1A-1C, and 2A-2B.As well known, pixel array 42 typically includes a large number ofpixels arranged in an M×N array; however, CMOS image sensor 40 is shownas including a simplified pixel array 42 comprising a three by threearray of pixels 64, which, for ease of discussion, is a pixel circuit inaccordance with any of the foregoing embodiments, but may be any of avariety of pixel circuit types that are configured to implement a JFETSF with the FD acting as the gate of the JFET in accordance with thepresent disclosure. And, for example, in some embodiments, the pixelsmay be shared pixels (e.g., sharing a FD and RD and possibly additionalreadout circuitry) and may further be configured for in-pixel binning.

Row Addressing and Row Driver Circuitry 44 generates transfer gate (TG)control signals on lines 51, row select (RS) signals on lines 55, andreset drain (RD) control signals on lines 52. Column Readout Circuitry46 includes analog-to-digital circuitry 43 for sampling and digitizingoutput values readout from the pixel array 42. Particularly, circuitry43 may be implemented to comprise a plurality of A/D convertersconfigured to implement column-parallel readout. In some embodiments,the circuitry 43 may be configured such that the readout circuitryassociated with each column bus 32 may have a respectiveanalog-to-digital converter (ADC), though in some embodiments pairs ofcolumns may share an ADC.

Timing and control circuitry 48 controls both the row addressing and rowdriver circuitry 44 and the column readout circuitry 43. For instance,timing and control circuitry controls the row addressing and row drivercircuitry 44 for selecting the appropriate row for readout, and may, forexample, provide timing control signals in accordance with rollingshutter readout or global shutter readout. As indicated in FIG. 12 ,timing and control circuitry 48 may also communicably interface with ahost (e.g., a processor associated with a system comprising the imagesensor), which may, for example, in some implementations, specifyvarious control information.

As schematically depicted, signals on column buses 32 are sampled anddigitized by circuitry 43, and the digitized pixel values provided bythe ADCs may be provided to line buffers 45, which may be used totemporarily store digital signals from circuitry 43 for use by imageprocessor 47. In general, any number of line buffers 45 may be includedand, for example, each line buffer may be capable of storing digitalsignals representative of the charge signals that may be read from eachpixel in a given row of pixels in the pixel array 42. Image processor 47may be used to process the digital signals held in line buffers 36 toproduce output image data that may be provided to a device external tothe image sensor 40.

As may be appreciated, there are many possible alternativeimplementations of an image sensor architecture that may embody pixelshaving a FD and JFET SF with the FD acting as the JFET gate inaccordance with some embodiments of the present disclosure. By way ofexample, it will be understood that circuitry 46 may be divided into twoportions provided at the top and bottom of the pixels array.

It will also be understood in view of the foregoing that someembodiments of the disclosed pixel are well-suited for shared pixels,namely, in shared pixel architectures that share at least the floatingdiffusion and the reset drain/diffusion (e.g., and which, for example,may also share the source-follower, etc.). (As known to those skilled inthe art, such shared architectures may be used for in-pixelcharge-domain binning.) By way of example, in some embodiments afour-way shared pixel structure/unit can be used (e.g., possiblycomprising 7 transistors per shared pixel unit), which will furthershrink the size of each pixel (e.g., each jot of a QIS). And in somesuch shared-pixel embodiments, the four jots sharing a common FD can becovered by a single color filter and micro lens, which will mitigate theeffects of cross-talk between jots. Further, in some such embodiments,each shared-pixel unit comprising four jots (e.g., and having a singlecolor filter and microlens) can be isolated by a single Deep TrenchIsolation (DTI) around the set of four jots. That is, four jots sharinga FD are not isolated from each other by DTI, but rather arecollectively isolated by DTI from other shared pixel units (i.e., otherunits of four jots sharing an FD). Such DTI will further reduce crosstalk between shared pixel units associated with respective colorfilters. It will be understood that other configurations of shared pixelunits (e.g., different numbers of jots sharing a common FD) may beimplemented accordingly.

In addition, it will be understood that a FD acting as the gate of aJFET SF in an image sensor pixel in accordance with various embodimentsof the present invention may be implemented in backside illuminated(BSI) or frontside illuminated image sensors. In other words,embodiments of the present disclosure are not limited exclusively toonly one of backside and frontside illuminated image sensors.

Further, for example, while pixels according to some embodiments of thepresent invention are well-suited for use in image sensors demandingvery high conversion gain (e.g., QIS, qDIS, or other single-bit ormulti-bit photoelectron counting sensors), it will be understood in viewof the ensuing disclosure that one or more features and/or embodimentsof the present invention are also applicable to conventional CMOS imagesensors (e.g., present-day, commercially available CMOS image sensorsfor consumer, manufacturing, and/or scientific applications). Similarly,it will be understood, for example, that a FD configured as a JFET gatein accordance with the present disclosure is not limited to being usedtogether with a pump-gate and distal FD, nor necessarily with a gatelessreset, regardless of whether the pixel is a QIS-type pixel.

Various embodiments of the present invention may be used inconfigurations that include color filter arrays and microlenses, andwhere individual photoelements may be isolated using shallow or deeptrench techniques that are common in state of the art image sensors.Furthermore, additional signal processing associated with quanta imagesensors may be incorporated on the same chip as the photodetector array.The image signal processing may be incorporated in a stacked layer inmanner similar to state of the art stacked CMOS image sensor arrays,where one chip in the stack is optimized for photodetector elementdevices, and the another chip for mixed signal circuits, withinterconnects between the stacked layers.

The present invention has been illustrated and described with respect tosome specific illustrative embodiments thereof, which embodiments aremerely illustrative of some of the principles of some embodiments of theinvention and are not intended to be exclusive or otherwise limitingembodiments. Accordingly, although the above description of illustrativeembodiments of the present invention, as well as various illustrativemodifications and features thereof, provides many specificities, theseenabling details should not be construed as limiting the scope of theinvention, and it will be readily understood by those persons skilled inthe art that the present invention is susceptible to many modifications,adaptations, variations, omissions, additions, and equivalentimplementations without departing from this scope and withoutdiminishing its attendant advantages. For instance, except to the extentnecessary or inherent in the processes themselves, no particular orderto steps or stages of methods or processes described in this disclosure,including the figures, is implied. In many cases the order of processsteps may be varied, and various illustrative steps may be combined,altered, or omitted, without changing the purpose, effect or import ofthe methods described. Similarly, the structure and/or function of acomponent may be combined into a single component or divided among twoor more components. It is further noted that the terms and expressionshave been used as terms of description and not terms of limitation.There is no intention to use the terms or expressions to exclude anyequivalents of features shown and described or portions thereof.Additionally, the present invention may be practiced without necessarilyproviding one or more of the advantages described herein or otherwiseunderstood in view of the disclosure and/or that may be realized in someembodiments thereof. It is therefore intended that the present inventionis not limited to the disclosed embodiments but should be defined inaccordance with claims that are based on the present disclosure, as suchclaims may be presented herein and/or in any patent applicationsclaiming priority to, based on, and/or corresponding to the presentdisclosure.

What is claimed is:
 1. An image sensor, comprising: a plurality ofpixels, at least one pixel of the plurality of pixels comprising: afloating diffusion region formed in a semiconductor substrate; atransfer gate configured to selectively cause transfer of photochargestored in the at least one pixel to the floating diffusion region; and ajunction field effect transistor (JFET) having (i) a source and a draincoupled by a channel region, and (ii) a gate comprising the floatingdiffusion region, wherein the floating diffusion region and the channelregion are configured such that charge selectively transferred to thefloating diffusion region by operation of the transfer gate causes achange in a gate potential of the gate JFET, which is followed by apotential of the source, and wherein the floating diffusion region isdisposed beneath the channel region.
 2. The image sensor according toclaim 1, wherein the channel region comprises a first doped region of afirst conductivity type configured to conduct current between the sourceand the drain along a lateral direction substantially parallel to asurface of the semiconductor substrate, the floating diffusion regioncomprises a second doped region of a second conductivity type oppositeto the first conductivity type, and the second doped region of thefloating diffusion region is disposed adjacent to and beneath the firstdoped region along the lateral direction between the source and thedrain.
 3. The image sensor according to claim 1, wherein the floatingdiffusion region and the channel region are configured such that thecharge selectively transferred to the floating diffusion region by theoperation of the transfer gate modulates current flow between the sourceand the drain via the channel region.
 4. The image sensor according toclaim 1, wherein a capacitance of the floating diffusion region is smallenough to provide a conversion gain of at least 500 μV/e− and the imagesensor is configured as a QIS.
 5. The image sensor according to claim 1,wherein the channel region is configured as a buried channel.
 6. Theimage sensor according to claim 1, wherein the image sensor isconfigured as a backside-illuminated device.
 7. The image sensoraccording to claim 1, wherein the transfer gate is spaced away from anddoes not overlap the floating diffusion region.
 8. The image sensoraccording to claim 1, wherein the floating diffusion region isconfigured to be reset using a reset drain without a reset gate.
 9. Theimage sensor according to claim 8, wherein the transfer gate is spacedaway from and does not overlap the floating diffusion region.
 10. Theimage sensor according to claim 1, wherein the at least one pixelcomprises a photodiode disposed substantially beneath the transfer gateand having a charge storage/accumulation region that is configured tostore the photocharge that is selectively transferred to the floatingdiffusion region using the transfer gate.
 11. The image sensor accordingto claim 1, wherein the plurality of pixels are configured as sharedpixels.
 12. The image sensor according to claim 1, wherein the channelregion is a p-type channel.
 13. The image sensor according to claim 1,wherein the transfer gate is spaced away from and does not overlap thefloating diffusion region along a lateral direction substantiallyparallel to a surface of the semiconductor substrate.
 14. A method forproviding an image sensor comprising a plurality of pixels, the methodcomprising: forming a floating diffusion region in a semiconductorsubstrate; forming a transfer gate configured to selectively causetransfer of photocharge stored in a pixel, of the plurality of pixels,to the floating diffusion region; and forming a junction field effecttrasnistor (JFET) in the semiconductor substrate, the JFET having (i) asource and a drain coupled by a channel region, and (ii) a gatecomprising the floating diffusion region, wherein the floating diffusionregion and the channel region are configured such that chargeselectively transferred to the floating diffusion region by operation ofthe transfer gate causes a change in a gate potential of the gate of theJFET, which is followed by a potential of the source, and wherein thefloating diffusion region is disposed beneath the channel region. 15.The method according to claim 14, wherein the channel region comprises afirst doped region of a first conductivity type configured to conductcurrent between the source and the drain along a lateral directionsubstantially parallel to a surface of the semiconductor substrate, thefloating diffusion region comprises a second doped region of a secondconductivity type opposite to the first conductivity type, and thesecond doped region of the floating diffusion region is disposedadjacent to and beneath the first doped region along the lateraldirection between the source and the drain.
 16. The method according toclaim 14, wherein the floating diffusion region and the channel regionare configured such that the charge selectively transferred to thefloating diffusion region by the operation of the transfer gatemodulates current flow between the source and the drain via the channelregion.
 17. The method according to claim 14, wherein a capacitance ofthe floating diffusion region is small enough to provide a conversiongain of at least 500 μV/e− and the image sensor is configured as a QIS.18. The method according to claim 14, wherein the transfer gate isspaced away from and does not overlap the floating diffusion region. 19.The method according to claim 14, wherein the floating diffusion regionis configured to be reset using a reset drain without a reset gate. 20.An image sensor, comprising: a plurality of pixels, at least one pixelof the plurality of pixels comprising a floating diffusion region formedin a semiconductor substrate; a transfer gate configured to selectivelycause transfer of photocharge stored in the at least one pixel to thefloating diffusion region; and a junction field effect transistor (JFET)having (i) a source and a drain coupled by a channel region, and (ii) agate comprising the floating diffusion region, wherein the floatingdiffusion region and the channel region are configured such that chargeselectively transferred to the floating diffusion region by operation ofthe transfer gate causes a change in a gate potential of the gate of theJFET, which is followed by a potential of the source, and wherein thechannel region comprises a first doped region of a first conductivitytype configured to conduct current between the source and the drainalong a lateral direction substantially parallel to a surface of thesemiconductor substrate, the floating diffusion region comprises asecond doped region of a second conductivity type opposite to the firstconductivity type, and the second doped region of the floating diffusionregion is disposed adjacent to and beneath the first doped region alongthe lateral direction between the source and the drain.